High-Temp Electronics For Venus Exploration, recent advances |
High-Temp Electronics For Venus Exploration, recent advances |
Mar 13 2013, 03:36 PM
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Member Group: Members Posts: 127 Joined: 20-April 05 Member No.: 291 |
(MOD NOTE: Started a new topic for this discussion to continue. Please remember the 'no sci-fi engineering' provision of rule 1.9. Have fun!)
Also, since I'm thinking about surface operations on Venus, the state-of-the-art in high temperature electronics has advanced quite far in the past decade. Its now possible to buy off the shelf chips from vendors designed to operate at the 250-300 C range. Meanwhile basic functionality has been tested at and beyond the temperatures needed for long-term surface operations on Venus: http://www.grc.nasa.gov/WWW/SiC/ http://www.gizmag.com/extreme-silicon-carb...ctronics/16410/ http://www.grc.nasa.gov/WWW/SiC/publicatio...Contact2010.pdf Another decade or so and a long-term Venus lander could be possible with (practically) off the shelf electronics! |
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Apr 9 2013, 11:51 AM
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Member Group: Members Posts: 128 Joined: 10-December 06 From: Atlanta Member No.: 1472 |
Making an IC is the difficult part. It is not clear if you have a high temperature semiconductor, it can be turned into an IC easily. I'm no expert by any mean, but my understanding is that the reason silicon ICs exist and work great is the favorable crystalline structure of Si and the existence of insulator bases that integrate well with Si (such as SiO2 and, in case of radiation hardened electronics, Al2O3=sapphire). I'm not sure if silicon carbide shares these favorable features. I guess that the earliest systems will be mainly based on discrete elements and few low density ICs.
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